Top gate pentacene thin film transistor with spin-coated dielectric
β Scribed by Taegeun Kwon; Changhoon Baek; Hong H. Lee
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 705 KB
- Volume
- 8
- Category
- Article
- ISSN
- 1566-1199
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We report on the fabrication of ultraviolet (UV)-sensing top-gate ZnO thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP) polymer gate dielectric on glass substrate. Our top-gate ZnO-TFT showed a field-effect mobility of 0.05 cm 2 /V s, maximum saturation current of 0.11 A at a gate bias of
An organic thin-film transistor was fabricated with pentacene as the active material and poly(4-vinyl phenol) as the gate-dielectric material. Atomic force microscope image shows that the pentacene film grows in the polycrystalline structure of the poly-4-vinylphenol (PVP) dielectric layer with the