๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

TiN/Al Ohmic contacts to N-face n-type GaN for high-performance vertical light-emitting diodes

โœ Scribed by Jeon, Joon-Woo; Seong, Tae-Yeon; Kim, Hyunsoo; Kim, Kyung-Kook


Book ID
119961301
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
556 KB
Volume
94
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Electrical characteristics of In/ITO p-t
โœ Joon-Ho Oh; Kyoung-Kook Kim; Hyun-Gi Hong; Kyeong-Jae Byeon; Heon Lee; Sang-Won ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 573 KB

We have investigated the annealing-induced improved electrical properties of In(10 nm)/ ITO(200 nm) contacts with p-type GaN. The contacts become ohmic with a specific contact resistance of 2.75 ร‚ 10 -3 O cm 2 upon annealing at 650