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TiN as a diffusion barrier between CoSi2 or PtSi and aluminum

✍ Scribed by R.J. Schutz

Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
723 KB
Volume
104
Category
Article
ISSN
0040-6090

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Correlation between microstructure contr
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TiN layers have been used as diffusion barriers to prevent intermixing of aluminium and silicon. During TiN deposition on Ti by reactive sputtering, oxygen has been introduced in-situ into the barrier. Depending on the oxygen flow, a different content of oxygen has been incorporated into the TiN lay

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The application of copper diffusion barrier films deposited by atomic layer deposition (ALD, ALCVDΰ―€) on functional multilevel, dual damascene structures is in its infancy. In this study, two different ALD barrier films (TiN and WNC) were evaluated to determine how they affected the electrical proper