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Time-Resolved Electroluminescence Study of Green Light-Emitting Diode

✍ Scribed by T. Kuroda; N. Horio; K. Taniguchi; H. Sato; C. Funaoka; A. Tackeuchi


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
183 KB
Volume
0
Category
Article
ISSN
1862-6351

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## Abstract ZnO/GaN p‐i‐n heterojunctions light emitting diodes were fabricated by plasma‐assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n‐ZnO/i‐ZnO/p‐GaN heterojunction light emitting diode. The emission of i‐ZnO was obtained due to the limitati