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Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN

✍ Scribed by Wraback, M.; Shen, H.; Carrano, J. C.; Collins, C. J.; Campbell, J. C.; Dupuis, R. D.; Schurman, M. J.; Ferguson, I. T.

Book ID
127264096
Publisher
American Institute of Physics
Year
2001
Tongue
English
Weight
223 KB
Volume
79
Category
Article
ISSN
0003-6951

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Experimental and Theoretical Studies of
Experimental and Theoretical Studies of Transient Electron Velocity Overshoot in GaN
✍ M. Wraback; H. Shen; S. Rudin; E. Bellotti πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 246 KB πŸ‘ 1 views

We employ an optically detected time-of-flight technique with femtosecond resolution that monitors the change in the electroabsorption due to charge transport in an AlGaN/GaN heterojunction p-i-n diode to measure the electron velocity overshoot in GaN at room temperature. It has been found that elec