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Band Structure Effects on the Transient Electron Velocity Overshoot in GaN

✍ Scribed by M. Wraback; H. Shen; E. Bellotti; J.C. Carrano; C.J. Collins; J.C. Campbell; R.D. Dupuis; M.J. Schurman; I.T. Ferguson

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
104 KB
Volume
228
Category
Article
ISSN
0370-1972

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Experimental and Theoretical Studies of Transient Electron Velocity Overshoot in GaN
✍ M. Wraback; H. Shen; S. Rudin; E. Bellotti πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 246 KB πŸ‘ 1 views

We employ an optically detected time-of-flight technique with femtosecond resolution that monitors the change in the electroabsorption due to charge transport in an AlGaN/GaN heterojunction p-i-n diode to measure the electron velocity overshoot in GaN at room temperature. It has been found that elec

Effects of electron–electron interaction
Effects of electron–electron interaction on the band structure in polydiacetylenes
✍ H.-F. Hu; K. L. Yao πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 128 KB πŸ‘ 3 views

The ground-state band structure of polydiacetylenes is theoretically studied with the extensional Su-Schriffer-Heeger model supplemented by electron-electron interactions. The results show the following. First, the interval of valence bands (conduction bands) increases because of the electron-electr