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Time-of-flight medium energy ion scattering study of epitaxial SiSi1 − xGex superlattice structures

✍ Scribed by C.F. McConville; T.C.Q. Noakes; S. Sugden; P.K. Hucknell; C.J. Sofield

Book ID
113287934
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
517 KB
Volume
118
Category
Article
ISSN
0168-583X

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Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm À2 up to 1e16 cm À2 , the associa