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Time-of-flight measurement of longitudinal carrier transport in a-Si:H/a-SiNx : H multilayer structures and gap state distribution in a-Si:H layers

โœ Scribed by R. Hattori; J. Shirafuji


Book ID
115988320
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
693 KB
Volume
128
Category
Article
ISSN
0022-3093

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Induced defects in a-Si:H/a-SiNx:H multi
โœ W.Z. Gu; Z.C. Wang; M.X. Sun ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 125 KB

The induced defects and their distribution in a-Si:H/a-SiN x :H multilayers are determined using an electromagnetic technique (EMT) and positron annihilation technique (PAT). It is found that the distributions of the induced defects in the interface regions on both sides of the a-Si:H sublayer are a