𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Time-Dependent Dielectric Breakdown of 4H-SiC MOS Capacitors and DMOSFETs

✍ Scribed by Matocha, K.; Dunne, G.; Soloviev, S.; Beaupre, R.

Book ID
114619472
Publisher
IEEE
Year
2008
Tongue
English
Weight
332 KB
Volume
55
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Comparative study of 4H-SiC and 2H-GaN M
Comparative study of 4H-SiC and 2H-GaN MOS capacitors and FETs
✍ Chow, T. Paul ;Naik, H. ;Li, Z. πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 822 KB

## Abstract We have comparatively characterized the electrical characteristics of 4H‐SiC and 2H‐GaN MOS capacitors and FETs. While progressive refinement of gate oxide processes, notably with NO anneal, has resulted in better threshold voltage control, reduced subthreshold slope and higher field‐ef