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Stability and 2-D Simulation Studies of Avalanche Breakdown in 4H-SiC DMOSFETs With JTE

✍ Scribed by Okayama, T.; Arthur, S.D.; Rao, R.R.; Kishore, K.; Rao, M.V.

Book ID: 114619086
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 432 KB
Volume: 55
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2007.912954

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