✦ LIBER ✦

Time-dependent degradation of AlGaN/GaN heterostructures grown on silicon carbide

✍ Scribed by D. W. Gotthold; S. P. Guo; R. Birkhahn; B. Albert; D. Florescu; B. Peres

Book ID: 107453236
Publisher: Springer US
Year: 2004
Tongue: English
Weight: 194 KB
Volume: 33
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-004-0192-9

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Optical characterization of InGaN/AlGaN/

Optical characterization of InGaN/AlGaN/GaN diode grown on silicon carbide

✍ Haddou EL Ghazi; Anouar Jorio; Izeddine Zorkani; Mohamed Ouazzani-Jamil 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 164 KB

Large Area AlGaN/GaN HEMTs Grown on Insu

Large Area AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates

✍ Lossy, R. ;Chaturvedi, N. ;Heymann, P. ;W�rfl, J. ;M�ller, S. ;K�hler, K. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 94 KB 👁 2 views

Large periphery Al 0.25 Ga 0.75 N/GaN-HEMTs on SiC-substrates are fabricated on a 2-inch process line using stepper lithography. DC characteristics reveal current densities above 1.2 A/mm and intrinsic transconductances of 360 mS/mm. Depending on device size the maximum frequency of oscillation f ma

A magnetotransport study of AlGaN/GaN he

A magnetotransport study of AlGaN/GaN heterostructures on silicon

✍ S. Elhamri; W. C. Mitchel; W. D. Mitchell; R. Berney; M. Ahoujja; J. C. Roberts; 📂 Article 📅 2005 🏛 Springer US 🌐 English ⚖ 151 KB

High magnetic field studies of AlGaN/GaN

High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN

✍ M. Siekacz; K. Dybko; C. Skierbiszewski; W. Knap; Z. Wasilewski; D. Maude; J. Łu 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 252 KB

Physical Properties of AlGaN/GaN Heteros

Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

✍ J. A. Grenko; C. L. Reynolds; D. W. Barlage; M. A. L. Johnson; S. E. Lappi; C. W 📂 Article 📅 2010 🏛 Springer US 🌐 English ⚖ 680 KB

High electron mobility in AlGaN/GaN hete

High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

✍ Frayssinet, E.; Knap, W.; Lorenzini, P.; Grandjean, N.; Massies, J.; Skierbiszew 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 299 KB