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Time and temperature dependence on rapid thermal annealing of molecular beam epitaxy grown Ga0.8In0.2N0.01As0.99quantum wells analyzed using photoluminescence

✍ Scribed by Sridhar Govindaraju; Jason M. Reifsnider; Michael M. Oye; Archie L. Holmes

Book ID: 107453101
Publisher: Springer US
Year: 2003
Tongue: English
Weight: 325 KB
Volume: 32
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-003-0249-1

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