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Rapid thermal annealing of GaN[sub x]As[sub 1−x] grown by radio-frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence

✍ Scribed by Loke, W. K.; Yoon, S. F.; Wang, S. Z.; Ng, T. K.; Fan, W. J.


Book ID
120733422
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
307 KB
Volume
91
Category
Article
ISSN
0021-8979

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