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Mechanism for rapid thermal annealing improvements in undoped GaN[sub x]As[sub 1âx]/GaAs structures grown by molecular beam epitaxy

✍ Scribed by Buyanova, I. A.; Pozina, G.; Hai, P. N.; Thinh, N. Q.; Bergman, J. P.; Chen, W. M.; Xin, H. P.; Tu, C. W.

Book ID: 120017654
Publisher: American Institute of Physics
Year: 2000
Tongue: English
Weight: 353 KB
Volume: 77
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1315632

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Mechanism for rapid thermal annealing improvements in undoped GaN[sub x]As[sub 1âx]/GaAs structures grown by molecular beam epitaxy

Mechanism for rapid thermal annealing improvements in undoped GaN[sub x]As[sub 1âx]/GaAs structures grown by molecular beam epitaxy