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Ti-Si-N films prepared by magnetron sputtering

✍ Scribed by Li Pan; Yizhen Bai; Dong Zhang; Jian Wang


Book ID
113107609
Publisher
Nonferrous Metals Society of China
Year
2012
Tongue
English
Weight
329 KB
Volume
31
Category
Article
ISSN
1001-0521

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Emission properties of Ti-DLC films prep
✍ H.F. Liang; Z.H. Liang; C.L. Liu; L.G. Meng πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 565 KB

The field emission properties of Ti-DLC films in diode and coplanar device structures were studied. An emission current density of 1.14 A/cm 2 could be obtained at an applied field of 33 V/mm and the threshold field was 24 V/mm for the coplanar emission structure. The silicon substrate was found to