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Threshold Voltage Variation in SOI Schottky-Barrier MOSFETs

✍ Scribed by Min Zhang; Knoch, J.; Shi-Li Zhang; Feste, S.; Schroter, M.; Mantl, S.


Book ID
114619130
Publisher
IEEE
Year
2008
Tongue
English
Weight
679 KB
Volume
55
Category
Article
ISSN
0018-9383

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Schottky barrier SOI-MOSFETs with high-k
✍ C. Henkel; S. Abermann; O. Bethge; G. Pozzovivo; P. Klang; M. StΓΆger-Pollach; E. πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 725 KB

Schottky barrier SOI-MOSFETs incorporating a La(2)O(3)/ZrO(2) high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N'-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameter