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Three-Dimensional Photodetectors in 3-D Silicon-On-Insulator Technology

โœ Scribed by Culurciello, Eugenio; Weerakoon, Pujitha


Book ID
121245370
Publisher
IEEE
Year
2007
Tongue
English
Weight
223 KB
Volume
28
Category
Article
ISSN
0741-3106

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Light confinement in 3D silicon doped wi
โœ F. Ouerghi; F. AbdelMalek; S. Haxha; M. Mejatty; H. Bouchriha; V. Haxha ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 887 KB

The numerical investigation of photonic band gaps (PBGs) for three-dimensional (3D) photonic crystals (PCs) of silicon doped with germanium (n-Si x Ge 1ร€x ) and silicon-on-insulator (SOI) structures has been illustrated. The effect of germanium-doping (Ge-doping) concentration on the vertical confin