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THM growth and properties of CuInSe2 single crystals

โœ Scribed by Hideto Miyake; Koichi Sugiyama

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
496 KB
Volume
125
Category
Article
ISSN
0022-0248

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## Abstract Both pโ€type and nโ€type CuInSe~2~ single crystals were implanted with 40 keV ^130^Xe^+^ ions up to doses of 5 ยท 10^16^ cm^โˆ’2^. Implanted layers on pโ€type substrates showed an initial increase of the resistivity followed by a continuous decrease of the resistivity at higher doses. Implant