Electrical Properties of CuInSe2 Single
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Dr. R. D. Tomlinson; M. V. Yakushev; Prof. Dr. H. Neumann
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Article
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1993
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John Wiley and Sons
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English
โ 418 KB
๐ 1 views
## Abstract Both pโtype and nโtype CuInSe~2~ single crystals were implanted with 40 keV ^130^Xe^+^ ions up to doses of 5 ยท 10^16^ cm^โ2^. Implanted layers on pโtype substrates showed an initial increase of the resistivity followed by a continuous decrease of the resistivity at higher doses. Implant