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Thin-film tin-doped indium oxide counter-electrode for electrochromic applications

✍ Scribed by S.J. Golden; B.C.H. Steele

Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
666 KB
Volume
28-30
Category
Article
ISSN
0167-2738

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## Abstract Deuterium‐doped indium tin oxide films, fabricated by dc plasma deposition in sputter gas consisting of deuterium and argon, were annealed at 300 °C for 40 min in flowing oxygen gas by using tubular gold image furnace. On oxygen annealing, the optical transparency of the film deposited