Thin-film interdiflusion. I. Au-Pd, Pd-Au, Ti-Pd, Ti-Au, Ti-Pd-Au, and Ti-Au-Pd

• Book ID: 104264120
• Publisher: Elsevier Science
• Year: 1976
• Tongue: English
• Weight: 152 KB
• Volume: 26
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/s0042-207x(76)81123-2

✦ Synopsis

As were heat treated over the range 250-500~C, and chemical depth profiles were obtained by measuring the surface composition with Auger electron spectroscopy while ion milling. Platinum films were 125-9000A thick. When Pt/GaAs was heated hz vacuum, the Pt-GaAs interaction initiated with a rapid migration of Ga into Pt and simultaneous formation of an As-rich layer at the Pt/GaAs interface. Gallium eventually travelled the entire thickness of even the 9000-/~ Pt film while arsenic stopped abruptly at a distance ~2/3 of the way into the Pt. Little or no Au was detected (<1 at. %) in the Pt or GaAs after extensive Pt/GaAs reaction in Au/Pt/GaAs. The reacted Pt film displayed a multilayered structure with each layer containing different amounts of Ga, As, and O. Pt/GaAs heated in ah" behaved