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Thickness Determination of Ultra-Thin Films on Si Substrates by EPMA

✍ Scribed by Campos, Christiani S. ;Vasconcellos, Marcos A. Z. ;Llovet, Xavier ;Salvat, Francesc

Publisher: Springer-Verlag
Year: 2004
Weight: 146 KB
Volume: 145
Category: Article
ISSN: 0344-838X
DOI: 10.1007/s00604-003-0120-3

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## Abstract The morphology and electrical resistivity of ultrathin Al metal films grown on (111) Si substrates using molecular‐beam epitaxy have been investigated. For thickness <60 nm, the film morphology consists of a two‐dimensional network of Al islands, which grows via Volmer–Weber mechanism.