Thickness dependence of electrical properties in thin films of undoped indium oxide prepared by ion-beam sputtering
β Scribed by T. Suzuki; T. Yamazaki; M. Takizawa; O. Kawasaki
- Publisher
- Springer
- Year
- 1989
- Tongue
- English
- Weight
- 433 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0022-2461
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract The electrical conductivity and absorption coefficient of amorphous indium oxide thin films, thermally evaporated on glass substrates at room temperature, were evaluated. For direct transitions the variation of the optical band gap with thickness was determined and this variation was su
## Abstract Molybdenum doped indium oxide (IO) thin films were deposited on the Coring F1737 glass substrates at 400βΒ°C by spray pyrolysis technique. The Mo doping was varied between 0 and 4βat.%. The films were characterized by their structural, electrical and optical properties. The films are con