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Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs

✍ Scribed by Jiseok Kim; Siddarth A. Krishnan; Sudarshan Narayanan; Michael P. Chudzik; Massimo V. Fischetti

Book ID
119326740
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
806 KB
Volume
52
Category
Article
ISSN
0026-2714

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Temperature dependence of drain current
Temperature dependence of drain current hysteresis in FD and PD-SOI n-MOSFETs
✍ K. Hayama; K. Takakura; H. Ohyama; J.M. RafΓ­; A. Mercha; E. Simoen; C. Claeys πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 175 KB

The hysteresis characteristics of the drain current (I D ) in FD-SOI n-MOSFETs are examined at different back gate voltage and temperature. The relationship between the hysteresis and the temperature is discussed in comparison with the result for PD-SOI n-MOS-FETs, taking into account the back gate