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Thickness and annealing dependent morphology changes of iron silicide nanostructures on Si(001)

✍ Scribed by György Molnár; László Dózsa; Zofia Vértesy; Zsófia Baji; Gábor Pető

Book ID: 112182427
Publisher: John Wiley and Sons
Year: 2012
Tongue: English
Weight: 895 KB
Volume: 9
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.201100662

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## Abstract The morphology and electrical resistivity of ultrathin Al metal films grown on (111) Si substrates using molecular‐beam epitaxy have been investigated. For thickness <60 nm, the film morphology consists of a two‐dimensional network of Al islands, which grows via Volmer–Weber mechanism.