✦ LIBER ✦

Thermoresistive and Piezoresistive Properties of Wurtzite N-GaN

✍ Scribed by Mingiacchi, S. ;Lugli, P. ;Bonfiglio, A. ;Conte, G. ;Eickhoff, M. ;Ambacher, O. ;Rizzi, A. ;Passaseo, A. ;Visconti, P. ;Cingolani, R.

Publisher: John Wiley and Sons
Year: 2002
Tongue: English
Weight: 111 KB
Volume: 190
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200203)190:1<281::aid-pssa281>3.0.co;2-u

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✦ Synopsis

We performed thermo and piezoresistive measurements on GaN bulk samples grown with different techniques (PIMBE, MOCVD). By analysing the I(V) characteristics as a function of temperature, we found a temperature coefficient of resistance (TCR ¼ a) of the same order of magnitude (a few percent per C) as commercial thermistors, with a peak value of 19%/ C. The measured gauge factor is about five, a value comparable with that obtained for GaN by other groups. We also performed PC vs. temperature measurements on a MQW GaN/AlGaN finding a peak shift of about 0.4 meV/K.

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