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High Pressure Luminescence of Zincblende and Wurtzite GaN

✍ Scribed by M. Steube; K. Reimann; O. Brandt; H. Yang; K. H. Plogg

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
141 KB
Volume
211
Category
Article
ISSN
0370-1972

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We performed thermo and piezoresistive measurements on GaN bulk samples grown with different techniques (PIMBE, MOCVD). By analysing the I(V) characteristics as a function of temperature, we found a temperature coefficient of resistance (TCR ΒΌ a) of the same order of magnitude (a few percent per C)