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Thermoelectric properties of higher manganese silicide films with addition of chromium

โœ Scribed by Q.R. Hou; W. Zhao; Y.B. Chen; D. Liang; X. Feng; H.Y. Zhang; Y.J. He

Book ID
106020356
Publisher
Springer
Year
2006
Tongue
English
Weight
316 KB
Volume
86
Category
Article
ISSN
1432-0630

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Thermoelectric properties of higher mang
Thermoelectric properties of higher manganese silicide films with addition of carbon
โœ Hou, Q. R. ;Zhao, W. ;Zhang, H. Y. ;Chen, Y. B. ;He, Y. J. ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 261 KB

## Abstract Polycrystalline higher manganese silicide (MnSi~1.73~, HMS) films with addition of carbon were prepared on thermally oxidized silicon substrates by magnetron sputtering. A carbon cap layer was used as the doping source. Both the Seebeck coefficient and the resistivity were strongly depe