Thermoelectric properties of higher manganese silicide films with addition of carbon

✍ Scribed by Hou, Q. R. ;Zhao, W. ;Zhang, H. Y. ;Chen, Y. B. ;He, Y. J.

• Book ID: 105363468
• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 261 KB
• Volume: 203
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200521426

✦ Synopsis

Abstract

Polycrystalline higher manganese silicide (MnSi~1.73~, HMS) films with addition of carbon were prepared on thermally oxidized silicon substrates by magnetron sputtering. A carbon cap layer was used as the doping source. Both the Seebeck coefficient and the resistivity were strongly dependent on the amount of carbon added to the films. When the thickness ratio of carbon to manganese was about 17%, the Seebeck coefficient and resistivity at room temperature were about 35 μV/K and 4.45 × 10^–3^ Ω cm, respectively. By reducing the thickness ratio to about 3%, the Seebeck coefficient and resistivity at room temperature increased to 107 μV/K and 18 × 10^–3^ Ω cm, respectively. With addition of carbon, both the maximum value of the Seebeck coefficient and the temperature at which the maximum occurred increased. Several shallow (0.028–0.085 eV) and deep (0.106–0.299 eV) energy levels were observed from the curves of the resistivity versus temperature. The activation energies of 0.845 and 1.11 eV were consistent with the reported energy band gaps for higher manganese silicide. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)