Thermodynamics of diamond film deposition at low pressure from chlorinated precursors
โ Scribed by Z.-J. Liu; D.W. Zhang; Y.-Z. Wan; J.-Y. Zhang; J.-T. Wang
- Book ID
- 106023497
- Publisher
- Springer
- Year
- 1999
- Tongue
- English
- Weight
- 95 KB
- Volume
- 68
- Category
- Article
- ISSN
- 1432-0630
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
A phenomenological model was derived to describe the deposition kinetics of oxide film growth from thermally activated decomposition of vapor precursor on a heated surface at low pressure. A Langmuir derivation of mass balance on the growing film surface with surface saturation condition was used to
Thin films of CdS were grown by low-pressure metalorganic chemical vapour deposition (LP-MOCVD, 10 72 Torr) on GaAs(100) and borosilicate glass using the novel single-source precursor bis(diethylmonothiocarbamato)cadmium(II). The deposition of CdS was observed at substrate temperatures of 300 8C and