𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Thermodynamic analysis of the growth of silicon-doped GaAs single crystals

✍ Scribed by Jindřich Leitner; František Moravec


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
548 KB
Volume
83
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Silicon Doping of GaAs Single Crystals
✍ Dr. F. Moravec; B. Štěpánek; V. Šestáková 📂 Article 📅 1992 🏛 John Wiley and Sons 🌐 English ⚖ 188 KB
Horizontal bridgman growth of gaas singl
✍ Dr. F. Moravec; M. Pelikán 📂 Article 📅 1985 🏛 John Wiley and Sons 🌐 English ⚖ 367 KB 👁 2 views

## Horizontal Bridgman Growth of GaAs Single Crystals I n order to meet requireinents for the preparation of low dislocation deiisity GaAs single crystals a horizontal Britlginan t.ypc apparatus was designed. Construction of the apparatus allows the estithlishtiient of enhanced teiiiperature stabi

LEC growth of large GaAs single crystals
✍ Shibata, Masatomo; Suzuki, Takashi; Kuma, Shoji; Inada, Tomoki 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 294 KB
Growth and characterization of heavily d
✍ R. Scala; M. Porrini; G. Borionetti 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 298 KB 👁 1 views

## Abstract Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market