Thermodynamic analysis of the growth of silicon-doped GaAs single crystals
✍ Scribed by Jindřich Leitner; František Moravec
- Publisher
- Elsevier Science
- Year
- 1987
- Tongue
- English
- Weight
- 548 KB
- Volume
- 83
- Category
- Article
- ISSN
- 0022-0248
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## Horizontal Bridgman Growth of GaAs Single Crystals I n order to meet requireinents for the preparation of low dislocation deiisity GaAs single crystals a horizontal Britlginan t.ypc apparatus was designed. Construction of the apparatus allows the estithlishtiient of enhanced teiiiperature stabi
## Abstract Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market