Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes
β Scribed by Yatskiv, R; Grym, J
- Book ID
- 120423615
- Publisher
- Institute of Physics
- Year
- 2013
- Tongue
- English
- Weight
- 527 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0268-1242
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## Abstract The electrical and structural properties of molybdenum (Mo) Schottky contact to nβtype GaN (4.07 Γ 10^18^ cm^β3^) have been investigated before and after annealing at 600 Β°C. Measurements show that the Schottky barrier height of the asβdeposited sample was 0.81 eV (__I__β__V__) and 1.02
For the first time, we observed exciton dead layers in Pt/GaN Schottky diodes with N and Ga-face polarity. We show that these layers determine the shape of electroreflectance and photocurrent spectra close to the band gap in dependence on the bias voltage. Analysis of experimental data using a spati