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Thermal stability of electrical properties of ZnO:Al films deposited by room temperature magnetron sputtering

✍ Scribed by Tao Wang; Xungang Diao; Peng Ding

Book ID
116608230
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
867 KB
Volume
509
Category
Article
ISSN
0925-8388

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## Abstract Al doped ZnO films were prepared by reactive direct current (DC) magnetron sputtering at room temperature. The targets were metallic Al and Zn while the gases were Ar and O~2~. X‐ray diffraction (XRD) shows that the films are of hexagonal structure and Al is successfully doped into ZnO