Thermal reactivation of nonradiative recombination centers in hydrogenated AlxGa1−xAs:Si
✍ Scribed by Lysenko, V. S. ;Kopev, P. S. ;Nazarov, A. N. ;Naumovets, G. A. ;Popov, V. B. ;Tkachenko, A. S. ;Vasiliev, A. M. ;Ustinov, V. M.
- Publisher
- John Wiley and Sons
- Year
- 1993
- Tongue
- English
- Weight
- 399 KB
- Volume
- 139
- Category
- Article
- ISSN
- 0031-8965
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The coexistence of the DX center with other donor-related bound states has been investigated in Si-doped direct gap AI,Ga I \_ xAs, by comparing electron density data obtained by capacitance/voltage and Hall measurements. These experiments were carried out under saturated persistent photoconductivit
Two statistics are developed using the multiconfigurate character of the DX center to analyse donors in n-type Al x Ga 1--x As:Si. The first statistics is derived assuming that the conduction electrons arise exclusively from DX centers. The second statistics supposes the existence of shallow donors