✦ LIBER ✦

Thermal processing of GaAsSb/GaAs low-dimensional strained-layer structures

✍ Scribed by K.P. Homewood; W.P. Gillin; R.E. Pritchard; W.S. Truscott; K.E. Singer

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 283 KB
Volume: 7
Category: Article
ISSN: 0749-6036
DOI: 10.1016/0749-6036(90)90226-w

No coin nor oath required. For personal study only.

✦ Synopsis

Strained 100 A GaAsSb quantum wells in GaAs, grown by Molecular Beam Epitaxy have heen subjected to thermal anneals up to a temperature of 950 "C and for times varying from a few seconds to several minutes. The interdiffusion on the group V sublattice has been monitored using photo1 umineacence of the ground state &ions from the quantum well. We have made measumments on undoped and both p and n, Be and Si, doped structures. The intermixin g is observed to be strongly non-linear. Doping is found to reduce the interdiffusion.

📜 SIMILAR VOLUMES

Thermal processing of strained-layer InG

Thermal processing of strained-layer InGaAs/GaAs quantum well interface

✍ G. Zhang; M. Pessa 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 303 KB

Relaxation of strained InGaAs/GaAs layer

Relaxation of strained InGaAs/GaAs layers under thermal processing

✍ M.A. Lourenço; K.P. Homewood; L. Considine 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 283 KB

Preparation and electrical characterizat

Preparation and electrical characterization of low-dimensional net structures made out of GaAs epitaxial layers

✍ L.V Govor; M Goldbach; I.A Bashmakov; J Parisi 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 641 KB

The transport properties of low-dimensional patterned semiconductors exhibit interesting phenomena. In this paper, we report on the preparation and electric characterization of mesoscopic GaAs nets which are obtained by Ar-ion etching with a polymer net as mask. The diameter of the meshes is about 1