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Relaxation of strained InGaAs/GaAs layers under thermal processing

✍ Scribed by M.A. Lourenço; K.P. Homewood; L. Considine

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
283 KB
Volume
28
Category
Article
ISSN
0921-5107

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Thermal processing of GaAsSb/GaAs low-di
Thermal processing of GaAsSb/GaAs low-dimensional strained-layer structures
✍ K.P. Homewood; W.P. Gillin; R.E. Pritchard; W.S. Truscott; K.E. Singer 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 283 KB

Strained 100 A GaAsSb quantum wells in GaAs, grown by Molecular Beam Epitaxy have heen subjected to thermal anneals up to a temperature of 950 "C and for times varying from a few seconds to several minutes. The interdiffusion on the group V sublattice has been monitored using photo1 umineacence of t