## Abstract In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the e
โฆ LIBER โฆ
Thermal Oxide Layers on Indium Antimonide
โ Scribed by Korwin-Pawlowski, M. L. ;Heasell, E. L.
- Book ID
- 105370535
- Publisher
- John Wiley and Sons
- Year
- 1975
- Tongue
- English
- Weight
- 534 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0031-8965
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