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On the intermetallic compounds indium antimonide, gallium antimonide, and aluminum antimonide

✍ Scribed by R.G. Breckenridge; R.F. Blunt; W.R. Hosler; H.P.R. Frederikse; J.H. Becker; W. Oshinsky

Publisher
Elsevier Science
Year
1954
Weight
185 KB
Volume
20
Category
Article
ISSN
0031-8914

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✍ Dr. L. D. Pramatarova; Dr. D. N. Tretjakov πŸ“‚ Article πŸ“… 1981 πŸ› John Wiley and Sons 🌐 English βš– 347 KB πŸ‘ 2 views

## Abstract In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the e