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Thermal modeling of tubular horizontal hot-wall low pressure chemical vapor deposition reactors

✍ Scribed by C. Azzaro; J.P. Couderc

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
1003 KB
Volume
57
Category
Article
ISSN
0923-0467

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A phenomenological model was derived to describe the deposition kinetics of oxide film growth from thermally activated decomposition of vapor precursor on a heated surface at low pressure. A Langmuir derivation of mass balance on the growing film surface with surface saturation condition was used to