A physically motivated model that accounts for the spatial and temporal evolution of extended defect distribution in ion-implanted Si is presented. Free physical parameters are extracted from experimental data and by means of a genetic algorithm (GA). Transmission electron microscopy (TEM) data and
โฆ LIBER โฆ
Thermal evolution of defects produced by implantation of H, D and He in Silicon
โ Scribed by P.J. Simpson; A.P. Knights; M. Chicoine; K. Dudeck; O. Moutanabbir; S. Ruffell; F. Schiettekatte; B. Terreault
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 860 KB
- Volume
- 255
- Category
- Article
- ISSN
- 0169-4332
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