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Thermal diffusion at 300 K in binary systems of helium with CH4, C2H4, C2H6, and CHF3

โœ Scribed by Dunlop, Peter J.; Bignell, C. M.


Book ID
120456210
Publisher
American Institute of Physics
Year
1989
Tongue
English
Weight
564 KB
Volume
90
Category
Article
ISSN
0021-9606

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Reaction rate constartls of SiHI(%'At) have been directly measured for the first time using the laser photolysis-laser-induced fluorescence method. The preparation of SiH: radical in the laser photolysis (193 m-n) or phenylsilane and the concentration of the radiczd is demonstrated by a dye laser at