Thermal degradation of Ni-based Schottky contacts on 6H–SiC
✍ Scribed by Bohumil Barda; Petr Macháč; Stanislav Cichoň; Marie Kudrnová
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 502 KB
- Volume
- 257
- Category
- Article
- ISSN
- 0169-4332
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📜 SIMILAR VOLUMES
The temperature dependence of current-voltage (I-V) characteristics of as-fabricated and annealed Ni/n-type 6H-SiC Schottky diode has been investigated in the temperature range of 100-500 K. The forward I-V characteristics have been analysed on the basis of standard thermionic emission theory. It ha
When using Schottky barrier diodes (SBDs) on silicon (Si) to study the thermal stability of radiation-induced defects, point defects injection into the silicon substrate can occur at temperatures where silicidation occurs. These injected point defects can react with the radiation-induced defects and