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Thermal chemical vapor deposition of semiconductors for thin film transistor applications

✍ Scribed by D.W. Greve

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
728 KB
Volume
25
Category
Article
ISSN
0167-9317

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## Abstract Atmospheric pressure chemical vapor deposition (APCVD) of niobium sulfide coatings was achieved on glass substrates from the reaction of NbCl~5~ and S(SiMe~3~)~2~, __t__Bu~2~S~2~, __t__BuSH, or HSCH~2~CH~2~SH at 250βˆ’600 Β°C. The niobium sulfide films grown at temperatures above 500 Β°C we