Thermal annealing of porous silicon to develop a quasi monocrystalline structure
β Scribed by M. Banerjee; E. Bontempi; S. Bhattacharya; S. Maji; S. Basu; H. Saha
- Publisher
- Springer US
- Year
- 2008
- Tongue
- English
- Weight
- 695 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0957-4522
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π SIMILAR VOLUMES
An analytical model that simulates the performance of an elementary thin silicon solar cell with a thin film quasi-monocrystalline porous silicon (QMPS) at the backside reflector is developed. A complete set of equations for the photocurrent generated under the effect of the reflected light is solve
Unlike crystalline silicon, quasi-monocrystalline porous silicon (QMPS) layers have a top surface with small voids in the body. What is more pertinent to the present study is the fact that, at a given wavelength of interest for solar cells, these layers are often reported, in the literature, to have
Silicon capped by thermal oxide has been implanted with 1 β’ 10 17 H/cm 2 and the implant profile peaking at the interface. Samples were subjected to thermal annealing and characterized by ERD, FTIR, RBS/channeling, UV/VIS reflectance and cathodoluminescence regarding H-content, crystalline quality a