𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Thermal annealing effects on a compositionally graded SiGe layer fabricated by oxidizing a strained SiGe layer

✍ Scribed by Kunhuang Cai; Cheng Li; Yong Zhang; Jianfang Xu; Hongkai Lai; Songyan Chen


Book ID
108060505
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
787 KB
Volume
254
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


A comparative analysis of thermal gate o
✍ Sun-Ghil Lee; Young Pil Kim; Hye-Lan Lee; Beom Jun Jin; Jong-Wook Lee; Yu Gyun S πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 198 KB

Although the high mobility channel was formed with the strained Si layer on the fully relaxed Si 0.8 Ge 0.2 buffer layer, the mobility was severely attenuated with increasing the gate bias due to the degraded interface. The quality of oxide grown on strained Si was found to be worse than that for th