Low frequency noise measurements and the characterization of bipolar transistors were used for the evaluation of siliconon-insulator (SOI) films obtained by zone-melting recrystallization (ZMR) and epitaxial Si layers grown on them with regard to bipolar complementary metal-oxide-semiconductor (BICM
✦ LIBER ✦
Thermal analysis on zone-melting recrystallization of silicon-on-insulator films using a finite difference method
✍ Scribed by H.H Richter; B Tillack; H Andrä; W Weinelt
- Book ID
- 108026782
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 323 KB
- Volume
- 173
- Category
- Article
- ISSN
- 0921-5093
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