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Theory of the growth of SiO2 in an oxygen plasma

✍ Scribed by A. Kiermasz; W. Eccleston; J.L. Moruzzi


Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
383 KB
Volume
26
Category
Article
ISSN
0038-1101

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Reactivity of plasma-treated SiO2 agains
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During p&ma tratment of SiOl (deh)dm:ed at 700Β°C in high \*actturn) electrons become trapped at the surface and in the bulk. The captured electrons from the ~4 known Ei centre, an F-like electron centre with the unpaired electron &nIy in an s-t) oe orbit& and COT which comes irom carbon impurities.