Reactivity of plasma-treated SiO2 against O2: An EPR study

✍ Scribed by H.-J. Tiller; G. Rudakoff

• Publisher: Elsevier Science
• Year: 1979
• Tongue: English
• Weight: 408 KB
• Volume: 62
• Category: Article
• ISSN: 0009-2614
• DOI: 10.1016/0009-2614(79)80186-4

✦ Synopsis

During p&ma tratment of SiOl (deh)dm:ed at 700°C in high *actturn) electrons become trapped at the surface and in the bulk. The captured electrons from the ~4 known Ei centre, an F-like electron centre with the unpaired electron &nIy in an s-t) oe orbit& and COT which comes irom carbon impurities. Adsorption of 02 (partial pressure 5 X low3 torr <PO._ C IO-' tom) gives OK species that depend on the adsorption temperature. characterized by the fonowinggmh.tes: _q, ?z 2-069._qz = 2.009.g3 = 3.000. T,& = 300 K;g, = 2.039.gz = z*oo7.g3 = 3.007. Tads = 77 I;.