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Theory of polarization dependent intersubband transitions in p-type SiGe/Si self-assembled quantum dots

✍ Scribed by Lin, Yih-Yin; Singh, Jasprit


Book ID
121684691
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
240 KB
Volume
96
Category
Article
ISSN
0021-8979

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We present a detailed study of the polarization dependence of subband absorption and photoconductivity in Si/SiGe quantum wells. For samples with a hole concentration of p :2.8;10 cm\, both p-and s-polarized absorptions have been observed and transitions to several excited states are clearly identif