A detailed study of the polarization dependence of subband absorption and photoconductivity in pseudomorphic p-type Si/Si 0.64 Ge 0.36 quantum wells is presented. The fabricated quantum well infrared photodetectors (QWIP) show a photoresponse between 3 and 8 Β΅m with a peak-wavelength of Ξ» p = 5 Β΅m u
β¦ LIBER β¦
Theory of polarization dependent intersubband transitions in p-type SiGe/Si self-assembled quantum dots
β Scribed by Lin, Yih-Yin; Singh, Jasprit
- Book ID
- 121684691
- Publisher
- American Institute of Physics
- Year
- 2004
- Tongue
- English
- Weight
- 240 KB
- Volume
- 96
- Category
- Article
- ISSN
- 0021-8979
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