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Theory of point defects in GaN, AlN, and BN: Relaxation and pressure effects

โœ Scribed by Gorczyca, I.; Svane, A.; Christensen, N. E.

Book ID
121742741
Publisher
The American Physical Society
Year
1999
Tongue
English
Weight
114 KB
Volume
60
Category
Article
ISSN
1098-0121

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Band structure and high-pressure phase t
Band structure and high-pressure phase transition in GaN, AlN, InN and BN
โœ I. Gorczyca; N.E. Christensen ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 366 KB

The linear muffin-tin orbital method is used to calculate the band structure and to investigate the structural properties of III-V nitrides under high pressure. The obtained pressure coefficients of energy gaps, dielectric constants, bulk moduli and phase transition pressures are compared with exist